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Электронные компоненты и устройства - Рынок электроники

Силовые транзисторы IXYS I 650 В

Родительская категория: Рынок Категория: Компоненты и устройства

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Рабочий ток составляет от 2 А до 120 А, сопротивление при включении составляет 24 мОм.


Компания IXYS представила линию силовых полевых МОП-транзисторов 650 В класса Х2, основанных на технологии Ultra Junction Power.

Рабочий ток составляет от 2 А до 120 А, сопротивление при включении составляет 24 мОм.

Транзисторы могут применяться в схемах коррекции коэффициента мощности, импульсных и резонансных источниках питания, преобразователях постоянного тока а постоянный, электроприводах переменного и постоянного тока, твердотельных реле, робототехнике, в системах сервоуправления.

По сравнению с существующими аналогами новые МОП-транзисторы обладают более высокой эффективностью, высокой плотностью мощности, меньшим тепловыделением.

Транзисторы выпускаются в стандартных размерах TO-252, TO-220, TO-263, SOT-227, TO-247, PLUS247 и TO-264. Маркировка некоторых моделей семейства: IXTY2N65X2, IXTA4N65X2, IXTP8N65X2 и IXTK102N65X2.




IXYS Corporation (IXYS), a worldwide manufacturer of power semiconductors and ICs for energy efficiency, power management, medical, transportation and motor control applications, today announced its Ultra Junction Power MOSFET product line: 650V X2-Class Power MOSFETs. With current ratings ranging from 2A to 120A, and on resistance as low as 24 milliohms, they are well suited for high-efficiency, high-speed power switching applications.

These devices were developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced on resistance and gate charge. A low on-state resistance reduces the conduction losses. It also lowers the energy stored in the output capacitance, thereby minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.

“Our Ultra Junction technology has a better figure of merit than the state of the art super junction technology, when it comes to power MOSFET performance and cost of manufacturing. Our scientists have developed it with IXYS’ standards of ruggedness that made our power MOSFETs world famous. With the combination of reduced on resistance and improved switching and thermal performance, these devices offer the best cost performance to our customers, even better than SiC MOSFETs, especially in ruggedness and reliability,” commented Dr. Nathan Zommer, CEO and Founder of IXYS Corporation. “We have already been delivering these products to select customers and utilize them in our new Power Solid State Relay products.”

Designed for such applications as Power Factor Correction (PFC) circuits, switched-mode and resonant-mode power supplies, DC-DC converters, AC and DC motor drives, solid state relays, and robotic and servo control, these MOSFETs enable higher efficiency along with high power density and cooler system performance.

These new 650V X2 Power MOSFETs are available in the following international standard size packages: TO-252, TO-220 (standard or over-molded), TO-263, SOT-227, TO-247, PLUS247, and TO-264. Some example part numbers include IXTY2N65X2, IXTA4N65X2, IXTP8N65X2, and IXTK102N65X2, with drain current ratings of 2A, 4A, 8A, and 102A, respectively.


Additional product information can be obtained by visiting the IXYS website at or by contacting the company directly.


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